the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec representative for availability and additional information. ? 1998, 1999 mos field effect transistor pa1720 switching n-channel power mos fet industrial use data sheet document no. g13888ej3v0ds00 (3rd edition) date published april 2001 ns cp(k) printed in japan the mark ! shows major revised points. description the pa1720 is n-channel mos field effect transistor designed for dc / dc converters and power management application of notebook computers. features ? low on-resistance r ds(on)1 = 25.0 m ? max. (v gs = 10 v, i d = 4.0 a) r ds(on)2 = 33.0 m ? max. (v gs = 4.5 v, i d = 4.0 a) r ds(on)3 = 38.0 m ? max. (v gs = 4.0 v, i d = 4.0 a) ? low c iss : c iss = 800 pf typ. ? built-in g-s protection diode ? small and surface mount package (power sop8) ordering information part number package pa1720g power sop8 absolute maximum ratings (t a = 25 c, all terminals are connected.) drain to source voltage (v gs = 0) v dss 30 v gate to source voltage (v ds = 0) v gss 20 v drain current (dc) i d(dc) 8 a drain current (pulse) note1 i d(pulse) 32 a total power dissipation (t a = 25 c) n ote2 p t 2.0 w single avalanche current note3 i as 8.0 a single avalanche energy note3 e as 6.4 mj channel temperature t ch 150 c storage temperature t stg ?55 to + 150 c notes 1. pw 10 s, duty cycle 1 % 2. mounted on ceramic substrate of 1200 mm 2 x 2.2 mm 3. starting t ch = 25 c, r g = 25 ?, v gs = 20 v 0 v
data sheet g13888ej3v0ds 2 pa1720 electrical characteristics (t a = 25 c, all terminals are connected.) characteristics symbol test conditions min. typ. max. unit drain to source on-state resistance r ds(on)1 v gs = 10 v, i d = 4.0 a 20.0 25.0 m ? r ds(on)2 v gs = 4.5 v, i d = 4.0 a 25.5 33.0 m ? r ds(on)3 v gs = 4.0 v, i d = 4.0 a 29.0 38.0 m ? gate to source cut-off voltage v gs(off) v ds = 10 v, i d = 1 ma 1.5 2.0 2.5 v forward transfer admittance | y fs |v ds = 10 v, i d = 4.0 a 3.0 7.0 s drain leakage current i dss v ds = 30 v, v gs = 0 v 10 a gate to source leakage current i gss v gs = 16 v, v ds = 0 v 10 a input capacitance c iss v ds = 10 v 800 pf output capacitance c oss v gs = 0 v 250 pf reverse transfer capacitance c rss f = 1 mhz 96 pf turn-on delay time t d(on) i d = 4.0 a 20 ns rise time t r v gs(on) = 10 v 80 ns turn-off delay time t d(off) v dd = 15 v 40 ns fall time t f r g = 10 ? 40 ns total gate charge q g i d = 8 a 14 nc gate to source charge q gs v dd = 24 v 2.3 nc gate to drain charge q gd v gs = 10 v 3.6 nc body diode forward voltage v f(s-d) i f = 8 a, v gs = 0 v 0.86 v reverse recovery time t rr i f = 8 a, v gs = 0 v 30 ns reverse recovery charge q rr di/dt = 100 a/ s40nc test circuit 3 gate charge v gs = 20 0 v pg. r g = 25 ? 50 ? d.u.t. l v dd test circuit 1 avalanche capability pg. d.u.t. r l v dd test circuit 2 switching time r g pg. i g = 2 ma 50 ? d.u.t. r l v dd i d v dd i as v ds bv dss starting t ch v gs 0 = 1 s duty cycle 1 % v gs wave form i d wave form v gs i d 10 % 0 0 90 % 90 % 90 % v gs(on) i d t on t off t d(on) t r t d(off) t f 10 %10 %
data sheet g13888ej3v0ds 3 pa1720 typical characteristics (t a = 25 c) derating factor of forward bias safe operating area t a - ambient temperature - ?c dt - percentage of rated power - % 0 20 40 60 80 100 120 140 160 20 40 60 80 100 total power dissipation vs. ambient temperature t a - ambient temperature - ? c p t - total power dissipation - w 0 20 40 60 80 100 120 140 160 2.8 2.4 2.0 1.6 1.2 0.8 0.4 mounted on ceramic substrate of 1200 mm 2.2 mm 2 forward bias safe operating area v ds - drain to source voltage - v i d - drain current - a 0.1 0.01 0.1 1 10 100 1 10 100 t a = 25 ? c single pulse i d(dc) = 32 a pw = 100 ms pw = 10 ms pw = 1 ms pw = 100 s power dissipation limited i d(dc) = 8 a r ds(on) limited (v gs = 10 v) remark mounted on ceramic substrate of 1200 mm 2 2.2 mm transient thermal resistance vs. pulse width pw - pulse width - s r th(t) - transient thermal resistance - ? c/w 1 0.01 0.1 10 100 0.0001 0.001 0.01 0.1 1 100 10 mounted on ceramic substrate of 1200 mm 2 x 2.2 mm single pulse 1000 r th(ch-a) = 62.5 ? c/w ! !
data sheet g13888ej3v0ds 4 pa1720 forward transfer characteristics v gs - gate to source voltage - v i d - drain current - a 0.1 1 10 100 pulsed 012 4 3 v ds = 10 v t a = 150 ? c 75 ? c 25 ? c ? 25 ? c 56 drain current vs. drain to source voltage v ds - drain to source voltage - v i d - drain current - a 0.0 0.8 1.2 1.6 30 20 10 0.4 pulsed 0 v gs = 10 v 4.5 v 4.0 v forward transfer admittance vs. drain current i d - drain current - a |y fs | - forward transfer admittance - s v ds =10 v pulsed 1 1 10 100 10 100 0.1 t a = ? 25 ? c 25 ? c 75 ? c 150 ? c 0.01 0.1 pulsed drain to source on-state resistance vs. gate to source voltage v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - m ? 05 40 10 15 100 20 0 60 80 i d = 4 a 8 a drain to source on-state resistance vs. drain current i d - drain current - a r ds(on) - drain to source on-state resistance - m ? 80 60 40 20 10 100 0.1 0 1 pulsed 10 v 4.5 v v gs = 4.0 v 100 gate to source cut-off voltage vs. channel temperature t ch - channel temperature - ? c v gs(off) - gate to source cut-off voltage - v v ds = 10 v i d = 1 ma ? 50 0 150 50 0.0 1.0 100 2.0 3.0
data sheet g13888ej3v0ds 5 pa1720 drain to source on-state resistance vs. channel temperature t ch - channel temperature - ? c r ds(on) - drain to source on-state resistance - m ? 40 30 20 10 50 100 150 4.5 v 10 v - 50 0 50 v gs = 4.0 v source to drain diode forward voltage v sd - source to drain voltage - v i sd - diode forward current - a 1 0.0 10 100 0.5 1.0 1.5 0.1 v gs = 10 v 0 v capacitance vs. drain to source voltage v ds - drain to source voltage - v c iss , c oss , c rss - capacitance - pf 10 0.1 100 1000 10000 1 10 100 v gs = 0 v f = 1 mhz c iss c oss c rss 0.01 reverse recovery time vs. drain current i f - drain current - a t rr - reverse recovery time - ns 1 0.1 10 1 10 100 1000 100 di / dt = 100 a / v gs = 0 v s
data sheet g13888ej3v0ds 6 pa1720 single avalanche current vs. inductive load l - inductive load - h i as - single avalanche current - a 10 100 1 10 100 1m 10m r g = 25 ? v dd = 15 v v gs = 20 v 0 v starting t ch = 25 ? c i as = 8 a e as = 6.4 mj single avalanche energy derating factor starting t ch - starting channel temperature - ? c energy derating factor - % 0 25 50 75 100 125 150 20 40 60 80 100 120 r g = 25 ? v dd = 15 v v gs = 20 v 0 v i as 8 a
data sheet g13888ej3v0ds 7 pa1720 package drawing (unit : mm) power sop8 remark the diode connected between the gate and source of the transistor serves as a protector against esd. when this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. equivalent circuit source body diode gate protection diode gate drain 1.27 0.12 m 6.0 0.3 4.4 0.40 +0.10 0.05 0.78 max. 0.05 min. 1.8 max. 1.44 0.8 0.5 0.2 0.15 +0.10 0.05 5.37 max. 0.10 14 85 1 2, 3 4 5, 6, 7, 8 ; non connect ; source ; gate ; drain
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